GTRAN
829 Flynn Road
Camarillo, CA 93012
805.482.1088

Large Area InGaAs Photodiodes (950-1650 nm)

Large area InGaAs photodiodes with active diameters of between 500 micrometers and 10 millimeters are available. Class A devices feature very low dark current and high shunt resistance. High reliability is assured through planar semiconductor design and dielectric passivation. Available packages include TO cans, ceramic submounts, and custom.

Applications

  • Test and Measurement Equipment and Instrumentation
  • Optical Power Monitors
  • Fiber Indentifiers
  • Military
P/N Active Area
(Ø μm)		 Typical Id
(nA)		 Typical Cp
(pF)		 Typ. Resp. at
1310 nm
(A/W)		 Shunt Resistance
(MΩ)		 Max
VReverse
(V)		 Max
IReverse
(μA)		 Max
IForward
(mA)		 Package
PD500-xxx 0.5 25@-5.0V 20 0.90 >50 15 5 50 Ceramic sub-mount, TO46
PD1M-xxx 1.0 50@-1.0V 150 0.90 >50 2 20 100 Ceramic sub-mount, TO46
PD2M-xxx 2.0 50@-1.0V 400 0.90 >5 2 25 100 Ceramic sub-mount,
TO5
PD3M-xxx 3.0 50@-0.3V 700 0.90 >1 2 20 100 Ceramic sub-mount,
TO5
PD5M-xxx 5.0 100@-0.3V - 0.90 >0.1 1 30 200 Ceramic sub-mount,
TO5
PD10M-xxx 10 2000@-0.3V - 0.90 >0.06 0.5 30 200 Ceramic flat pack
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